NTE5636 Triac DATASHEET
NTE5636 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 80 A
Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to case thermal resistance (RTH(j-c)): 2.5 K/W
Triggering gate voltage (VGT): 2.2 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 10 mA
Holding current (IH): 25 mA
Package: TO‑220F
NTE5636 Datasheet
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Description
NTE5631 thru NTE5637 TRIAC – 10 Amp Description: The NTE5631 through NTE5637 series of TRIACs are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), VDRM NTE5631 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |