NTE5638-08 Triac DATASHEET

NTE5638-08 ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 20 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 2.5 A
   Non repetitive surge peak on-state current (I_TSM): 30 A
   Critical rate of rise of off-state voltage (dV/dt): 7 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..100 °C
   Junction to case thermal resistance (R_TH(j-c)): 4 K/W
   Triggering gate voltage (V_GT): 2.2 V
   Peak on-state voltage drop (V_TM): 2.2 V
   Triggering gate current (I_GT): 25 mA
   Holding current (I_H): 15 mA

NTE5638-08 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

NTE5638-08 Datasheet

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Description

NTE5638, NTE5638-06, NTE5638-08 TRIAC - 8A Isolated Tab Description: The NTE5638 is an 8 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void-free glass passivated chips. This device is a bi-directional triode thyristor and may be switched from off-state to conduction for either polarity of applied voltage with positive or negative gate trigger current. The NTE5638 is de- signed for control applications in lighting, he

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Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. NTE5638-08 Datasheet