NTE5645 Triac DATASHEET

NTE5645 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 20 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 3 A
   Non repetitive surge peak on-state current (I_TSM): 30 A
   Critical rate of rise of off-state voltage (dV/dt): 3 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..90 °C
   Junction to case thermal resistance (R_TH(j-c)): 4 K/W
   Triggering gate voltage (V_GT): 2.2 V
   Peak on-state voltage drop (V_TM): 1.85 V
   Triggering gate current (I_GT): 3 mA
   Holding current (I_H): 5 mA

Package: TO‑205AA

 

NTE5645 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5645 Datasheet

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Description

NTE5645 TRIAC – 10A Isolated Tab Description: The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void–free glass passivated chips. This device is a bi–directional triode thyristor and may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de- signed for control applications in lighting, heating, cooling