NTE5650 Triac DATASHEET

NTE5650 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 20 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 3 A
   Non repetitive surge peak on-state current (I_TSM): 30 A
   Critical rate of rise of off-state voltage (dV/dt): 3 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..90 °C
   Junction to case thermal resistance (R_TH(j-c)): 4 K/W
   Triggering gate voltage (V_GT): 2.2 V
   Peak on-state voltage drop (V_TM): 1.85 V
   Triggering gate current (I_GT): 3 mA
   Holding current (I_H): 5 mA

Package: TO‑205AA

 

NTE5650 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5650 Datasheet

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Description

NTE5650 thru NTE5653 TRIAC – 100VRM, 2.5A Description: The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed in TO–5 outline cans. The NTE5650 through NTE5653 are bi–directional triode thyristors and may be switched from off– state to conduction for either polarity of applied voltage with positive or negative gate–trigger current and