NTE5656 Triac DATASHEET

NTE5656 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 40 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 40 A
   Non repetitive surge peak on-state current (I_TSM): 400 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 375 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -20..125 °C
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.8 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 120 mA

 

NTE5656 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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NTE5656 Datasheet

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Description

NTE5655 thru NTE5657 TRIAC – 800mA Sensitive Gate Description: The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS devices. These TRIACs feature void–free glass passivated chips. These NTE devices are bi–directional triode thyristors and may be switched from off–state to conduc- tion for either polarity of applied voltage with positive or negative gate trigger current. They are de- signed for contro