NTE6403 Reverse-dinistor DATASHEET

NTE6403 ELECTRICAL SPECIFICATIONS

 

   Type: Reverse-dinistor
   Maximum repetitive peak and off-state voltage (V_DRM): 32 V
   Maximum RMS on-state current (I_T(RMS)): 2 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 278 K/W

Package: DO‑204AH

 

NTE6403 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE6403 Datasheet

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Description

NTE6403 Integrated Circuit Silicon Bilateral Switch (SBS) Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coeffi- cient and excellently matched characteristics in both directions. A gate lead is provided to eliminate rate effect and to obtain triggering at lower voltages. The NTE6403 is specifically designed and character