NTE6404 Reverse-dinistor Spec

NTE6404 ELECTRICAL SPECIFICATIONS

 

   Type: Reverse-dinistor
   Maximum repetitive peak and off-state voltage (V_DRM): 40 V
   Maximum RMS on-state current (I_T(RMS)): 2 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 278 K/W

Package: DO‑204AH

 

NTE6404 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE6404 Spec

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Description

NTE6404 Silicon Unilateral Switch (SUS) Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain trig- gering at lower values and to obtain transient free wave forms. Silicon Unilateral Switches are specifically designed