NTE6416 Reverse-dinistor DATASHEET

NTE6416 ELECTRICAL SPECIFICATIONS

 

   Type: Reverse-dinistor
   Maximum repetitive peak and off-state voltage (V_DRM): 110 V
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 13 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -30..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 15 K/W
   Peak on-state voltage drop (V_TM): 1.5 V
   Holding current (I_H): 50 mA

Package: DO‑204AH

 

NTE6416 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE6416 Datasheet

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Description

NTE6415 thru NTE6419 Bidirectional Thyristor Diodes (SIDAC) Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on–state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current