NYE08-10B6ST1G DATASHEET

NYE08-10B6ST1G ELECTRICAL SPECIFICATIONS

NYE08-10B6ST1G Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

NYE08-10B6ST1G Datasheet

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Description

NYE08-10B6ST1G Protected Triac Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. http://onsemi.com Features PROTECTED TRIAC • Sensitive Gate Trigger Current in Two Quadrants 0.8 AMPERE RMS • Blocking Voltage to 600 V 600 VOLTS • Surface Mount Package • Compliant with IEC6100-4-5 OUT COM • These are P

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. NYE08-10B6ST1G Datasheet