NYE08-10B6TG SCR Spec

NYE08-10B6TG ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 6 V
   Non repetitive surge peak on-state current (I_TSM): 30 A
   Triggering gate current (I_GT): 4 mA

 

NYE08-10B6TG Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NYE08-10B6TG Spec

Page #1

Page #2

Description

NYE08-10B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO-92 package which is readily adaptable for use in automatic insertion equipment. http://onsemi.com Features PROTECTED TRIAC • One-Piece, Injection-Molded Package 0.8 AMPERE RMS • Blocking Voltage to 600 V 600 VOLTS • Sensitive Gate Triggering in Two Trigger Modes (Q