NYE08-10B6TG SCR DATASHEET

NYE08-10B6TG ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 6 V
   Non repetitive surge peak on-state current (I_TSM): 30 A
   Triggering gate current (I_GT): 4 mA

NYE08-10B6TG Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

NYE08-10B6TG Datasheet

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Description

NYE08-10B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO-92 package which is readily adaptable for use in automatic insertion equipment. http://onsemi.com Features PROTECTED TRIAC • One-Piece, Injection-Molded Package 0.8 AMPERE RMS • Blocking Voltage to 600 V 600 VOLTS • Sensitive Gate Triggering in Two Trigger Modes (Q

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. NYE08-10B6TG Datasheet