NYT6-5D6DT4G SCR DATASHEET

NYT6-5D6DT4G ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 6 V
   Non repetitive surge peak on-state current (I_TSM): 30 A
   Triggering gate current (I_GT): 4 mA

NYT6-5D6DT4G Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

NYT6-5D6DT4G Datasheet

Page #1

Page #2

Description

NYT6-5D6DTG, NYT6-5D6DT4G Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light http://onsemi.com and speed control. TRIACS Features 6.0 AMPERES RMS • Passivated Die for Reliability and Uniformity • Four-Quadrant Triggering 600 VOLTS • Blocking Voltage to 600 V • On-State Current Rating of 6.0 A RMS at 93°C MT2 MT1 • Low Level Triggerin

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. NYT6-5D6DT4G Datasheet