NYT6-5D6DTG SCR Spec

NYT6-5D6DTG ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1000 V
   Maximum average on-state current (I_T(AVR)): 128 A
   Non repetitive surge peak on-state current (I_TSM): 1700 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.23 K/W

 

NYT6-5D6DTG Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NYT6-5D6DTG Spec

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Description

NYT6-5D6DTG, NYT6-5D6DT4G Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light http://onsemi.com and speed control. TRIACS Features 6.0 AMPERES RMS • Passivated Die for Reliability and Uniformity • Four-Quadrant Triggering 600 VOLTS • Blocking Voltage to 600 V • On-State Current Rating of 6.0 A RMS at 93°C MT2 MT1 • Low Level Triggerin