PDT20116 SCR-module DATASHEET

PDT20116 ELECTRICAL SPECIFICATIONS

   Type: SCR-module
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 30 A
   Maximum RMS on-state current (I_T(RMS)): 47 A
   Non repetitive surge peak on-state current (I_TSM): 600 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.7 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.45 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 50 mA

PDT20116 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones