All Transistors. SCR. PDT308 Datasheet

 

PDT308 SCR-module DATASHEET

PDT308 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (PGM): 1 W
   Maximum repetitive peak and off-state voltage (VDRM): 1600 V
   Maximum average on-state current (IT(AVR)): 60 A
   Maximum RMS on-state current (IT(RMS)): 94 A
   Non repetitive surge peak on-state current (ITSM): 1200 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.5 K/W
   Triggering gate voltage (VGT): 2.5 V
   Peak on-state voltage drop (VTM): 1.45 V
   Triggering gate current (IGT): 100 mA
   Holding current (IH): 50 mA

 

PDT308 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

PDT308 Datasheet

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PDT308
 datasheet

Page #2

PDT308
 datasheet #2

Description

PDT308 PDH308 THYRISTOR 30A Avg 800 Volts PCH308 ■回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) PDT K2 G2 1 2 3 K1 G1 PDH 1 2 3 K1 G1 PCH K2 G2 1 2 3 ■最大定格 Maximum Ratings 耐圧クラス Grade 項   目 記号 単位 Parameter Symbol Unit PDT308/PDH308/PCH308 くり返しピークオフ電圧 VDRM 800 V Repetitive Peak Off-State Voltage 非くり返しピークオフ電圧 VDSM 960 V Non Repetitive Peak

 
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