PDT400N8 SCR-module DATASHEET

PDT400N8 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum average on-state current (I_T(AVR)): 100 A
   Maximum RMS on-state current (I_T(RMS)): 157 A
   Non repetitive surge peak on-state current (I_TSM): 3000 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.1 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.2 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 60 mA

 

PDT400N8 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

PDT400N8 Datasheet

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Description

PDT400N8 PDH400N8 ＴＨＹＲＩＳＴＯＲ PCH400N8 PAT400N8 400Ａ Ａvg 800 Ｖolts PAH400N8 ■回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING Dimension:［mm］ ■最大定格 Ｍaximum Ratings 項 目 記号 耐圧クラス Grade 単位 Parameter Symbol Unit PDT／PDH／PCH／PAT／PAH400N8 くり返しピークオフ電圧 V 800 V DRM Repetitive Peak Off-State Voltage 非くり返しピークオフ電圧 V 900 V DSM Non Repetitive Peak Off-State Volt