PDT6016 SCR-module Spec

PDT6016 ELECTRICAL SPECIFICATIONS

   Type: SCR-module
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 300 V
   Maximum average on-state current (I_T(AVR)): 130 A
   Maximum RMS on-state current (I_T(RMS)): 204 A
   Non repetitive surge peak on-state current (I_TSM): 2250 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.09 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.28 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 50 mA

PDT6016 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

PDT6016 Spec

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Description

PDT6016 ＴＨＹＲＩＳＴＯＲ 60ＡＡvg 1600 Ｖolts PDH6016 PCH6016 ■回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING Dimension:［mm］ ■最大定格Ｍaximum Ratings 項目記号耐圧クラス Grade 単位 Parameter Symbol Unit PDT6016／PDH6016／PCH6016 くり返しピークオフ電圧 V 1600 V DRM Repetitive Peak Off-State Voltage 非くり返しピークオフ電圧 V 1700 V DSM Non Repetitive Peak Off-State Voltage くり返しピ�

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Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500

SCR & TRIAC. PDT6016 PDF. Equivalents Search