PFT2014N SCR-module DATASHEET

PFT2014N ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 90 A
   Maximum RMS on-state current (I_T(RMS)): 140 A
   Non repetitive surge peak on-state current (I_TSM): 1350 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.15 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.58 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 40 mA

 

PFT2014N Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

PFT2014N Datasheet

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Description

PFT2014N THYRISTOR 200A Avg 300 Volts ■回路図　CIRCUIT ■外形寸法図　OUTLINE DRAWING （単位　Dimension：mm） 1 2 3 K1 K2 K3 G1 G2 G3 Base ■最大定格　Maximum Ratings 耐圧クラス　Grade 項　　　目 記号 単位 Parameter Symbol Unit PFT2014N くり返しピークオフ電圧 VDRM 400 V Repetitive Peak Off-State Voltage 非くり返しピークオフ電圧 VDSM 500 V Non Repetitive Peak Off-State Voltage くり返しピーク逆電圧 VRRM