PFT906N SCR-module DATASHEET
PFT906N ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 150 A
Non repetitive surge peak on-state current (ITSM): 3200 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..150 °C
Junction to case thermal resistance (RTH(j-c)): 0.22 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.22 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 100 mA
PFT906N Datasheet
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Description
PFT903N PFT906N THYRISTOR 90A Avg 300~600 Volts ■回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) 1 2 3 K2 G2 G1 K1 K3 G3 φ� φ� ■最大定格 Maximum Ratings 耐圧クラス Grade 項 目 記号 単位 Parameter Symbol Unit PFT903N PFT906N くり返しピークオフ電圧 VDRM 300 600 V Repetitive Peak Off-State Voltage 非くり返しピークオフ電圧 VDSM 400 700 V Non Repetitive Peak Off-State Voltage
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |