PGH100N8 SCR-module DATASHEET

PGH100N8 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1600 V
   Maximum average on-state current (I_T(AVR)): 200 A
   Non repetitive surge peak on-state current (I_TSM): 3200 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.25 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.35 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 100 mA

 

PGH100N8 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

PGH100N8 Datasheet

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Description

PGH100N8 ＴＨＹＲＩＳＴＯＲ 100Ａ Ａvg 800 Ｖolts ■回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING Dimension:［mm］ 総合定格・特性 Part of Diode Bridge & Thyristor ■最大定格 Maximum Ratings 項 目 記号 単位 条件 定格値 Parameter Symbol Unit Conditions Max. Rated Value 平均出力電流 T =124℃（電圧印加なし） C 三相全波整流 100 Average Rectified Output Current Non-Biased for Thyristor Io A (AV) 3-Phas