PGH20016AM SCR-module DATASHEET

PGH20016AM ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1600 V
   Maximum average on-state current (I_T(AVR)): 75 A
   Non repetitive surge peak on-state current (I_TSM): 1200 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.3 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.2 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 80 mA

 

PGH20016AM Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

PGH20016AM Datasheet

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Description

PGH20016AM THYRISTOR 200A Avg 1600 Volts ■回路図　CIRCUIT ■外形寸法図　OUTLINE DRAWING （単位　Dimension：mm） G R4 +5 －6 AC1 AC2 AC3 総合定格・特性　Part of Diode Bridge & Thyristor ■最大定格　Maximum Ratings 項　　　目 記号 条　　　件 定格値 単位 Parameter Symbol Conditions Max. Rated Value Unit Tc＝90℃ （電圧印加なし） 200 A 三相全波整流 Non-Bias 平均出力電流 I0 3-Phase Full （AV） Average Rect