PHT250N16 SCR DATASHEET
PHT250N16 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 400 A
Maximum RMS on-state current (IT(RMS)): 630 A
Non repetitive surge peak on-state current (ITSM): 7200 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.07 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.55 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 60 mA
PHT250N16 Datasheet
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Description
PHT250N16 THYRISTOR 250A Avg 1600 Volts ■回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING Dimension:[mm] (注)アノードとカソード間の空間距離は 5mmであり、UL1557,400V系にて使用 される場合、十分な空間距離を満足させて ください. The striking distance between the anode and the cathode of this module is 5mm, filing with UL1557, but when used by the system of 400V AC, take an enough striking dis
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |