PSET132-08 SCR DATASHEET

PSET132-08 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1600 V
   Maximum average on-state current (I_T(AVR)): 132 A
   Non repetitive surge peak on-state current (I_TSM): 3600 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..130 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.25 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.3 V
   Triggering gate current (I_GT): 300 mA
   Holding current (I_H): 200 mA

Package: ECO‑PAC2

PSET132-08 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

PSET132-08 Datasheet

Page #1

Page #2

Description

ECO-PACTM 2 Thyristor Module PSET 132/08-18 ITAVM = 132 A VRRM = 600-1800V Preliminary Data Sheet VRSM VRRM Type VDSM VDRM ACE-1 (V) (V) 900 800 PSET 132/08 E-3 1300 1200 PSET 132/12 K-12 1500 1400 PSET 132/14 1700 1600 PSET 132/16 1900 1800 PSET 132/18 SVX-18 Symbol Test Conditions Maximum Ratings Features ITAVM TC = 85 °C, 180° sine 132 A • Isolation voltage 3600 V∼ ITSM TVJ = 45 °C t = 10 ms (50 Hz), sine 3600 A • Planar glass passivated chips VR = 0 t = 8.3

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. PSET132-08 Datasheet