PSET132-16 SCR DATASHEET
PSET132-16 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 180 A
Maximum RMS on-state current (IT(RMS)): 280 A
Non repetitive surge peak on-state current (ITSM): 4500 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..130 °C
Junction to case thermal resistance (RTH(j-c)): 0.17 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.1 V
Triggering gate current (IGT): 300 mA
Holding current (IH): 200 mA
Package: ECO‑PAC2
PSET132-16 Datasheet
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Description
ECO-PACTM 2 Thyristor Module PSET 132/08-18 ITAVM = 132 A VRRM = 600-1800V Preliminary Data Sheet VRSM VRRM Type VDSM VDRM ACE-1 (V) (V) 900 800 PSET 132/08 E-3 1300 1200 PSET 132/12 K-12 1500 1400 PSET 132/14 1700 1600 PSET 132/16 1900 1800 PSET 132/18 SVX-18 Symbol Test Conditions Maximum Ratings Features ITAVM TC = 85 °C, 180° sine 132 A • Isolation voltage 3600 V∼ ITSM TVJ = 45 °C t = 10 ms (50 Hz), sine 3600 A • Planar glass passivated chips VR = 0 t = 8.3
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |