PSKH132-08IO1 SCR-module DATASHEET
PSKH132-08IO1 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 8 W
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 130 A
Maximum RMS on-state current (IT(RMS)): 300 A
Non repetitive surge peak on-state current (ITSM): 4750 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.23 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.36 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 200 mA
PSKH132-08IO1 Datasheet
Page #1
Page #2
Description
ITRMS = 2x 300 A PSKT 132 Thyristor Modules ITAVM = 2x 130 A PSKH 132 Thyristor/Diode Modules VRRM = 800-1800 V Preliminary Data Sheet 7 6 3 VRSM VRRM Type 4 2 5 1 VDSM VDRM V V Version 1 Version 1 900 800 PSKT 132/08io1 PSKH 132/08io1 1300 1200 PSKT 132/12io1 PSKH 132/12io1 1500 1400 PSKT 132/14io1 PSKH 132/14io1 1700 1600 PSKT 132/16io1 PSKH 132/16io1 1900 1800 PSKT 132/18io1 PSKH 132/18io1 3 6 7 1 5 4 2 Symbol Test Conditions Maximum Ratings PSKT Version 1 ITRM
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |