PSKH224-20IO1 SCR-module DATASHEET
PSKH224-20IO1 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 1400 V
Maximum average on-state current (IT(AVR)): 221 A
Maximum RMS on-state current (IT(RMS)): 400 A
Non repetitive surge peak on-state current (ITSM): 8000 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..130 °C
Junction to case thermal resistance (RTH(j-c)): 0.16 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.4 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 150 mA
PSKH224-20IO1 Datasheet
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Description
Thyristor Modules PSKT 224 ITRMS = 2x 400 A Thyristor/Diode Modules PSKH 224 ITAVM = 2x 240 A VRRM = 2000-2200 V Preliminary Data Sheet 3 76 54 2 VRSM VRRM Type VDSM VDRM VV 1 2100 2000 PSKT 224/20io1 PSKH 224/20io1 2300 2200 PSKT 224/22io1 PSKH 224/22io1 3 6 7 1 5 4 2 Symbol Test Conditions Maximum Ratings ITRMS TVJ = TVJM 400 A PSKT ITAVM TC = 85°C; 180° sine 240 A ITSM TVJ = 45°C; t = 10 ms (50 Hz) 8000 A 3 1 5 4 2 VR = 0 t = 8.3 ms (60 Hz) 8500 A TVJ = TVJM t = 10
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |