PSKH250-08IO1 SCR-module DATASHEET
PSKH250-08IO1 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 287 A
Maximum RMS on-state current (IT(RMS)): 450 A
Non repetitive surge peak on-state current (ITSM): 9000 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..140 °C
Junction to case thermal resistance (RTH(j-c)): 0.13 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.36 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 150 mA
PSKH250-08IO1 Datasheet
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Description
Thyristor Modules PSKT 250 ITRMS = 2x 450 A Thyristor/Diode Modules PSKH 250 ITAVM = 2x 287 A VRRM = 800-1800 V Preliminary Data Sheet 3 76 2 5 4 VRSM VRRM Type 1 VDSM VDRM V V Version 1 Version 1 900 800 PSKT 250/08io1 PSKH 250/08io1 1300 1200 PSKT 250/12io1 PSKH 250/12io1 1500 1400 PSKT 250/14io1 PSKH 250/14io1 1700 1600 PSKT 250/16io1 PSKH 250/16io1 1900 1800 PSKT 250/18io1 PSKH 250/18io1 3 6 7 1 5 4 2 Symbol Test Conditions Maximum Ratings PSKT ITRMS, IFRMS TVJ = TV
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |