All Transistors. SCR. PSKH250-12IO1 Datasheet

 

PSKH250-12IO1 SCR-module DATASHEET

PSKH250-12IO1 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 1800 V
   Maximum average on-state current (IT(AVR)): 287 A
   Maximum RMS on-state current (IT(RMS)): 450 A
   Non repetitive surge peak on-state current (ITSM): 9000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..140 °C
   Junction to case thermal resistance (RTH(j-c)): 0.13 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 1.36 V
   Triggering gate current (IGT): 150 mA
   Holding current (IH): 150 mA

 

PSKH250-12IO1 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

PSKH250-12IO1 Datasheet

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PSKH250-12IO1
 datasheet

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PSKH250-12IO1
 datasheet #2

Description

Thyristor Modules PSKT 250 ITRMS = 2x 450 A Thyristor/Diode Modules PSKH 250 ITAVM = 2x 287 A VRRM = 800-1800 V Preliminary Data Sheet 3 76 2 5 4 VRSM VRRM Type 1 VDSM VDRM V V Version 1 Version 1 900 800 PSKT 250/08io1 PSKH 250/08io1 1300 1200 PSKT 250/12io1 PSKH 250/12io1 1500 1400 PSKT 250/14io1 PSKH 250/14io1 1700 1600 PSKT 250/16io1 PSKH 250/16io1 1900 1800 PSKT 250/18io1 PSKH 250/18io1 3 6 7 1 5 4 2 Symbol Test Conditions Maximum Ratings PSKT ITRMS, IFRMS TVJ = TV

 
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