PSKH255-12IO1 SCR-module DATASHEET

PSKH255-12IO1 ELECTRICAL SPECIFICATIONS

   Type: SCR-module
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1400 V
   Maximum average on-state current (I_T(AVR)): 27 A
   Maximum RMS on-state current (I_T(RMS)): 50 A
   Non repetitive surge peak on-state current (I_TSM): 520 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.88 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.64 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 200 mA

Package: TO‑240

PSKH255-12IO1 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

PSKH255-12IO1 Datasheet

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Description

PSKT 255 Thyristor Modules ITRMS = 2x 450 A PSKH 255 Thyristor/Diode Modules ITAVM = 2x 250 A VRRM = 1200-1800 V Preliminary Data Sheet 3 76 VRSM VRRM Type 54 2 VDSM VDRM VV 1 1300 1200 PSKT 255-12io1 PSKH 255-12io1 1500 1400 PSKT 255-14io1 PSKH 255-14io1 1700 1600 PSKT 255-16io1 PSKH 255-16io1 1900 1800 PSKT 255-18io1 PSKH 255-18io1 3 6 7 1 5 4 2 Symbol Test Conditions Maximum Ratings PSKT ITRMS, IFRMS TVJ = TVJM 450 A ITAVM, IFAVM TC = 85°C; 180° sine 250 A 3 1 5 4

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. PSKH255-12IO1 Datasheet