PSKH26-12IO8 SCR-module DATASHEET
PSKH26-12IO8 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum average on-state current (IT(AVR)): 320 A
Maximum RMS on-state current (IT(RMS)): 500 A
Non repetitive surge peak on-state current (ITSM): 9200 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..140 °C
Junction to case thermal resistance (RTH(j-c)): 0.11 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.32 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 150 mA
PSKH26-12IO8 Datasheet
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Description
Thyristor Modules PSKT 26 ITRMS = 2x 50 A Thyristor/Diode Modules PSKH 26 ITAVM = 2x 32 A VRRM = 800-1600 V Preliminary Data Sheet VRSM VRRM Type 3 TO-240 AA 6 VDSM VDRM 2 7 1 4 V V Version 1 Version 8 Version 8 5 900 800 PSKT 26/08io1 PSKT 26/08io8 PSKH 26/08io8 1300 1200 PSKT 26/12io1 PSKT 26/12io8 PSKH 26/12io8 1500 1400 PSKT 26/14io1 PSKT 26/14io8 PSKH 26/14io8 1700 1600 PSKT 26/16io1 PSKT 26/16io8 PSKH 26/16io8 3 6 7 1 5 4 2 Symbol Test Conditions Maximum Ratings PSKT
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |