All Transistors. SCR. PSKH312-12IO1 Datasheet

 

PSKH312-12IO1 SCR-module DATASHEET

PSKH312-12IO1 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 1800 V
   Maximum average on-state current (IT(AVR)): 320 A
   Maximum RMS on-state current (IT(RMS)): 520 A
   Non repetitive surge peak on-state current (ITSM): 9200 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..140 °C
   Junction to case thermal resistance (RTH(j-c)): 0.12 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 1.32 V
   Triggering gate current (IGT): 150 mA
   Holding current (IH): 150 mA

 

PSKH312-12IO1 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

PSKH312-12IO1 Datasheet

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PSKH312-12IO1
 datasheet

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PSKH312-12IO1
 datasheet #2

Description

PSKT 312 Thyristor Modules ITRMS = 2x 520 A PSKH 312 Thyristor/Diode Modules ITAVM = 2x 320 A VRRM = 1200-1800 V Preliminary Data Sheet 3 76 54 2 VRSM VRRM Type VDSM VDRM VV 1 1300 1200 PSKT 312-12io1 PSKH 312-12io1 1500 1400 PSKT 312-14io1 PSKH 312-14io1 1700 1600 PSKT 312-16io1 PSKH 312-16io1 1900 1800 PSKT 312-18io1 PSKH 312-18io1 Symbol Test Conditions Maximum Ratings 3 6 7 1 5 4 2 ITRMS, IFRMS TVJ = TVJM 520 A PSKT ITAVM, IFAVM TC = 85°C; 180° sine 320 A ITSM, IFSM

 
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