All Transistors. SCR. PSKH56-12IO1 Datasheet

 

PSKH56-12IO1 SCR-module DATASHEET

PSKH56-12IO1 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (PGM): 0.5 W
   Maximum repetitive peak and off-state voltage (VDRM): 1600 V
   Maximum average on-state current (IT(AVR)): 64 A
   Maximum RMS on-state current (IT(RMS)): 100 A
   Non repetitive surge peak on-state current (ITSM): 1500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.45 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.57 V
   Triggering gate current (IGT): 100 mA
   Holding current (IH): 200 mA

Package: TO‑240

 

PSKH56-12IO1 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

PSKH56-12IO1 Datasheet

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PSKH56-12IO1
 datasheet

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PSKH56-12IO1
 datasheet #2

Description

ITRMS = 2 x 100 A Thyristor Modules PSKT 56 ITAVM = 2 x 64 A Thyristor/Diode Modules PSKH 56 VRRM = 800-1800 V Preliminary Data Sheet 3 TO-240 AA 6 2 7 1 4 5 VRSM VRRM Type VDSM VDRM V V Version 1 Version 8 900 800 PSKT 56/08io1 PSKH 56/08io1 PSKT 56/08io8 PSKH 56/08io8 1300 1200 PSKT 56/12io1 PSKH 56/12io1 PSKT 56/12io8 PSKH 56/12io8 3 6 7 1 5 4 2 1500 1400 PSKT 56/14io1 -- PSKT 56/14io8 PSKH 56/14io8 1700 1600 PSKT 56/16io1 PSKH 56/16io1 PSKT 56/16io8 PSKH 56/16io8 19

 
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