PSKH56-12IO8 SCR-module DATASHEET
PSKH56-12IO8 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 64 A
Maximum RMS on-state current (IT(RMS)): 100 A
Non repetitive surge peak on-state current (ITSM): 1500 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.45 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.57 V
Triggering gate current (IGT): 100 mA
Holding current (IH): 200 mA
Package: TO‑240
PSKH56-12IO8 Datasheet
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Description
ITRMS = 2 x 100 A Thyristor Modules PSKT 56 ITAVM = 2 x 64 A Thyristor/Diode Modules PSKH 56 VRRM = 800-1800 V Preliminary Data Sheet 3 TO-240 AA 6 2 7 1 4 5 VRSM VRRM Type VDSM VDRM V V Version 1 Version 8 900 800 PSKT 56/08io1 PSKH 56/08io1 PSKT 56/08io8 PSKH 56/08io8 1300 1200 PSKT 56/12io1 PSKH 56/12io1 PSKT 56/12io8 PSKH 56/12io8 3 6 7 1 5 4 2 1500 1400 PSKT 56/14io1 -- PSKT 56/14io8 PSKH 56/14io8 1700 1600 PSKT 56/16io1 PSKH 56/16io1 PSKT 56/16io8 PSKH 56/16io8 19
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |