PSKH80-06 SCR-module DATASHEET
PSKH80-06 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 2000 V
Maximum average on-state current (IT(AVR)): 104 A
Maximum RMS on-state current (IT(RMS)): 180 A
Non repetitive surge peak on-state current (ITSM): 1700 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.22 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.74 V
Triggering gate current (IGT): 100 mA
Holding current (IH): 150 mA
Package: TO‑240
PSKH80-06 Datasheet
Page #1
Page #2
Description
ECO-PACTM 2 Thyristor/Diode Modules PSKH 80 ITAVM = 80 A VRRM = 600-1200V Preliminary Data Sheet VRSM VRRM Type VX-18 VDSM VDRM (V) (V) 700 600 PSKH 80/06 GI-10 AC-1 900 800 PSKH 80/08 1300 1200 PSKH 80/12 E-3 Symbol Test Conditions Maximum Ratings ITAVM TC = 85 °C, 180° sine 80 A ITSM TVJ = 45 °C t = 10 ms (50 Hz), sine 550 A Features VR = 0 t = 8.3 ms (60 Hz), sine 600 A • Isolation voltage 3600 V∼ TVJ = 125 °C t = 10 ms (50 Hz), sine 500 A • Planar glass pas
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |