PSKH80-08 SCR-module DATASHEET

PSKH80-08 ELECTRICAL SPECIFICATIONS

   Type: SCR-module
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 2200 V
   Maximum average on-state current (I_T(AVR)): 104 A
   Maximum RMS on-state current (I_T(RMS)): 180 A
   Non repetitive surge peak on-state current (I_TSM): 1700 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.22 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.74 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 150 mA

Package: TO‑240

PSKH80-08 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

PSKH80-08 Datasheet

Page #1

Page #2

Description

ECO-PACTM 2 Thyristor/Diode Modules PSKH 80 ITAVM = 80 A VRRM = 600-1200V Preliminary Data Sheet VRSM VRRM Type VX-18 VDSM VDRM (V) (V) 700 600 PSKH 80/06 GI-10 AC-1 900 800 PSKH 80/08 1300 1200 PSKH 80/12 E-3 Symbol Test Conditions Maximum Ratings ITAVM TC = 85 °C, 180° sine 80 A ITSM TVJ = 45 °C t = 10 ms (50 Hz), sine 550 A Features VR = 0 t = 8.3 ms (60 Hz), sine 600 A • Isolation voltage 3600 V∼ TVJ = 125 °C t = 10 ms (50 Hz), sine 500 A • Planar glass pas

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All Transistors. SCR. PSKH80-08 Datasheet