PSKT170-12IO1 SCR-module DATASHEET

PSKT170-12IO1 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 25 A
   Maximum RMS on-state current (I_T(RMS)): 40 A
   Non repetitive surge peak on-state current (I_TSM): 400 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.3 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 2.05 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 200 mA

Package: TO‑240

 

PSKT170-12IO1 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

PSKT170-12IO1 Datasheet

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Description

ITRMS = 2x 350 A PSKT 170 Thyristor Modules ITAVM = 2x 203 A Thyristor/Diode Modules VRRM = 1200-1800 V Preliminary Data Sheet VRSM VRRM Type 3 VDSM VDRM 76 54 2 V V Version 1 1300 1200 PSKT 170/12io1 3 6 7 1 5 4 2 1500 1400 PSKT 170/14io1 1700 1600 PSKT 170/16io1 1 1900 1800 PSKT 170/18io1 Symbol Test Conditions Maximum Ratings ITRMS TVJ = TVJM 350 A ITAVM TC = 85°C; 180° sine 203 A ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz) 5400 A VR = 0 t = 8.3 ms (60 Hz) 5800 A