PSKT170-18IO1 SCR-module DATASHEET
PSKT170-18IO1 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 25 A
Maximum RMS on-state current (IT(RMS)): 40 A
Non repetitive surge peak on-state current (ITSM): 400 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 1.3 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 2.05 V
Triggering gate current (IGT): 100 mA
Holding current (IH): 200 mA
Package: TO‑240
PSKT170-18IO1 Datasheet
Page #1
Page #2
Description
ITRMS = 2x 350 A PSKT 170 Thyristor Modules ITAVM = 2x 203 A Thyristor/Diode Modules VRRM = 1200-1800 V Preliminary Data Sheet VRSM VRRM Type 3 VDSM VDRM 76 54 2 V V Version 1 1300 1200 PSKT 170/12io1 3 6 7 1 5 4 2 1500 1400 PSKT 170/14io1 1700 1600 PSKT 170/16io1 1 1900 1800 PSKT 170/18io1 Symbol Test Conditions Maximum Ratings ITRMS TVJ = TVJM 350 A ITAVM TC = 85°C; 180° sine 203 A ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz) 5400 A VR = 0 t = 8.3 ms (60 Hz) 5800 A
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |