PSKT19-12IO8 SCR-module DATASHEET
PSKT19-12IO8 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 25 A
Maximum RMS on-state current (IT(RMS)): 40 A
Non repetitive surge peak on-state current (ITSM): 400 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 1.3 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 2.05 V
Triggering gate current (IGT): 100 mA
Holding current (IH): 200 mA
Package: TO‑240
PSKT19-12IO8 Datasheet
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Description
Thyristor Modules PSKT 19 ITRMS = 2x 40 A ITAVM = 2x 25 A VRRM = 800-1600 V Preliminary Data Sheet VRSM VRRM Type 3 TO-240 AA 6 VDSM VDRM 2 7 1 4 V V Version 1 Version 8 5 900 800 PSKT 19-08io1 PSKT 19-08io8 1300 1200 PSKT 19-12io1 PSKT 19-12io8 1500 1400 PSKT 19-14io1 PSKT 19-14io8 1700 1600 PSKT 19-16io1 PSKT 19-16io8 3 6 7 1 5 4 2 Symbol Test Conditions Maximum Ratings ITRMS TVJ = TVJM 40 A ITAVM TC = 58°C; 180° sine 25 A Version 1 TC = 85°C; 180° sine 18 A ITSM T
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |