All Transistors. SCR. PSKT19-12IO8 Datasheet

 

PSKT19-12IO8 SCR-module DATASHEET

PSKT19-12IO8 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (PGM): 0.5 W
   Maximum repetitive peak and off-state voltage (VDRM): 1600 V
   Maximum average on-state current (IT(AVR)): 25 A
   Maximum RMS on-state current (IT(RMS)): 40 A
   Non repetitive surge peak on-state current (ITSM): 400 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 1.3 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 2.05 V
   Triggering gate current (IGT): 100 mA
   Holding current (IH): 200 mA

Package: TO‑240

 

PSKT19-12IO8 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

PSKT19-12IO8 Datasheet

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PSKT19-12IO8
 datasheet

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PSKT19-12IO8
 datasheet #2

Description

Thyristor Modules PSKT 19 ITRMS = 2x 40 A ITAVM = 2x 25 A VRRM = 800-1600 V Preliminary Data Sheet VRSM VRRM Type 3 TO-240 AA 6 VDSM VDRM 2 7 1 4 V V Version 1 Version 8 5 900 800 PSKT 19-08io1 PSKT 19-08io8 1300 1200 PSKT 19-12io1 PSKT 19-12io8 1500 1400 PSKT 19-14io1 PSKT 19-14io8 1700 1600 PSKT 19-16io1 PSKT 19-16io8 3 6 7 1 5 4 2 Symbol Test Conditions Maximum Ratings ITRMS TVJ = TVJM 40 A ITAVM TC = 58°C; 180° sine 25 A Version 1 TC = 85°C; 180° sine 18 A ITSM T

 
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