PSKT255-12IO1 SCR-module DATASHEET
PSKT255-12IO1 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 1800 V
Maximum average on-state current (IT(AVR)): 250 A
Maximum RMS on-state current (IT(RMS)): 450 A
Non repetitive surge peak on-state current (ITSM): 9000 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..130 °C
Junction to case thermal resistance (RTH(j-c)): 0.14 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.36 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 150 mA
PSKT255-12IO1 Datasheet
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Description
PSKT 255 Thyristor Modules ITRMS = 2x 450 A PSKH 255 Thyristor/Diode Modules ITAVM = 2x 250 A VRRM = 1200-1800 V Preliminary Data Sheet 3 76 VRSM VRRM Type 54 2 VDSM VDRM VV 1 1300 1200 PSKT 255-12io1 PSKH 255-12io1 1500 1400 PSKT 255-14io1 PSKH 255-14io1 1700 1600 PSKT 255-16io1 PSKH 255-16io1 1900 1800 PSKT 255-18io1 PSKH 255-18io1 3 6 7 1 5 4 2 Symbol Test Conditions Maximum Ratings PSKT ITRMS, IFRMS TVJ = TVJM 450 A ITAVM, IFAVM TC = 85°C; 180° sine 250 A 3 1 5 4
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |