PSKT312-18IO1 SCR-module DATASHEET
PSKT312-18IO1 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 51 A
Maximum RMS on-state current (IT(RMS)): 80 A
Non repetitive surge peak on-state current (ITSM): 1150 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.53 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.75 V
Triggering gate current (IGT): 100 mA
Holding current (IH): 200 mA
Package: TO‑240
PSKT312-18IO1 Datasheet
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Description
PSKT 312 Thyristor Modules ITRMS = 2x 520 A PSKH 312 Thyristor/Diode Modules ITAVM = 2x 320 A VRRM = 1200-1800 V Preliminary Data Sheet 3 76 54 2 VRSM VRRM Type VDSM VDRM VV 1 1300 1200 PSKT 312-12io1 PSKH 312-12io1 1500 1400 PSKT 312-14io1 PSKH 312-14io1 1700 1600 PSKT 312-16io1 PSKH 312-16io1 1900 1800 PSKT 312-18io1 PSKH 312-18io1 Symbol Test Conditions Maximum Ratings 3 6 7 1 5 4 2 ITRMS, IFRMS TVJ = TVJM 520 A PSKT ITAVM, IFAVM TC = 85°C; 180° sine 320 A ITSM, IFSM
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |