PSKT95-12IO8 SCR-module DATASHEET
PSKT95-12IO8 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 116 A
Maximum RMS on-state current (IT(RMS)): 180 A
Non repetitive surge peak on-state current (ITSM): 2250 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.22 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.5 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 200 mA
Package: TO‑240
PSKT95-12IO8 Datasheet
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Description
ITRMS = 2x 180 A Thyristor Modules PSKT 95 ITAVM = 2x 116 A Thyristor/Diode Modules PSKH 95 VRRM = 800-1800 V Preliminary Data Sheet VRSM VRRM Type 3 VDSM VDRM TO-240 AA 6 2 7 1 4 V V Version 1 Version 8 5 900 800 PSKT 95/08io1 -- PSKT 95/08io8 PSKH 95/08io8 1300 1200 PSKT 95/12io1 PSKH 95-12io1 PSKT 95/12io8 PSKH 95/12io8 1500 1400 PSKT 95/14io1 -- PSKT 95/14io8 PSKH 95/14io8 1700 1600 PSKT 95/16io1 PSKH 95-16io1 PSKT 95/16io8 PSKH 95/16io8 1900 1800 PSKT 95/18io1 -- PSK
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |