PSVT160-12 SCR-module DATASHEET

PSVT160-12 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 49 A
   Maximum RMS on-state current (I_T(RMS)): 80 A
   Non repetitive surge peak on-state current (I_TSM): 1150 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.35 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.75 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 200 mA

 

PSVT160-12 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

PSVT160-12 Datasheet

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Description

Thyristor Modules PSVT 160 ITRMS = 180 A PSXT 160 VRRM = 800 - 1600 V Preliminary Data Sheet V RSM V RRM Type Type V DSM V DRM 900 800 PSVT 160/08 PSXT 160/08 1300 1200 PSVT 160/12 PSXT 160/12 Base 1500 1400 PSVT 160/14 PSXT 160/14 1700 1600 PSVT 160/16 PSXT 160/16 PSVT PSXT Symbol Test Conditions Maximum Ratings ITRMS 180 A ITAVM TC = 63°C 180° sine, 115 A ITAVM TC = 85°C 180° sine, 85 A ITSM TVJ = 45°C t = 10 ms (50Hz), sine 1700 A VR = 0 t = 8.3 ms (60Hz)