PSXT160-14 SCR-module DATASHEET
PSXT160-14 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 49 A
Maximum RMS on-state current (IT(RMS)): 80 A
Non repetitive surge peak on-state current (ITSM): 1150 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.35 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.75 V
Triggering gate current (IGT): 100 mA
Holding current (IH): 200 mA
PSXT160-14 Datasheet
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Description
Thyristor Modules PSVT 160 ITRMS = 180 A PSXT 160 VRRM = 800 - 1600 V Preliminary Data Sheet V RSM V RRM Type Type V DSM V DRM 900 800 PSVT 160/08 PSXT 160/08 1300 1200 PSVT 160/12 PSXT 160/12 Base 1500 1400 PSVT 160/14 PSXT 160/14 1700 1600 PSVT 160/16 PSXT 160/16 PSVT PSXT Symbol Test Conditions Maximum Ratings ITRMS 180 A ITAVM TC = 63°C 180° sine, 115 A ITAVM TC = 85°C 180° sine, 85 A ITSM TVJ = 45°C t = 10 ms (50Hz), sine 1700 A VR = 0 t = 8.3 ms (60Hz)
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |