Q6015L5 Triac Spec

Q6015L5 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 15 A
   Non repetitive surge peak on-state current (I_TSM): 167 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 775 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 50 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.1 K/W
   Peak on-state voltage drop (V_TM): 1.6 V
   Holding current (I_H): 70 mA

Package: TO220AB

 

Q6015L5 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

Q6015L5 Spec

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Description

INCHANGE Semiconductor isc Thyristors Q6015L5 DESCRIPTION ·With TO-220ins packaging ·A triac is a solid state silicon ·AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V Repetitive peak off-state voltage 600 V DRM V Repetitive peak