All Transistors. SCR. Q8006LH4 Datasheet

 

Q8006LH4 Triac DATASHEET

Q8006LH4 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 8 A
   Non repetitive surge peak on-state current (ITSM): 80 A
   Critical repetitive rate of rise of on-state current (dI/dt): 70 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 25 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 1.8 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 35 mA
   Holding current (IH): 35 mA

Package: TO220AB

 

Q8006LH4 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Q8006LH4 Datasheet

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Q8006LH4
 datasheet

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Q8006LH4
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Description



 
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