Q8016LH4G Triac DATASHEET
Q8016LH4G ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 25 A
Non repetitive surge peak on-state current (ITSM): 208 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 2 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.8 V
Triggering gate current (IGT): 80 mA
Holding current (IH): 100 mA
Package: TO220AB
Q8016LH4G Datasheet
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Description
Q8016LH4G Three Quadrant Triacs Simplified outline Description TO-220AB Passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber. Symbol Features • Blocking voltage to 800 V T2 T1 • On-state RMS current to 16 A G Applications • Motor control Descriptio
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