All Transistors. SCR. R0809LC10B Datasheet

 

R0809LC10B SCR DATASHEET

R0809LC10B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1200 V
   Maximum average on-state current (IT(AVR)): 830 A
   Non repetitive surge peak on-state current (ITSM): 8500 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.03 K/W
   Peak on-state voltage drop (VTM): 0.36 V

 

R0809LC10B Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

R0809LC10B Datasheet

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R0809LC10B
 datasheet

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R0809LC10B
 datasheet #2

Description

Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R0809LC10x Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VDRM Repetitive peak off-state voltage, (note 1) 1000 V VDSM Non-repetitive peak off-state voltage, (note 1) 1000 V VRRM Repetitive peak reverse voltage, (note 1) 1000 V VRSM Non-repetitive peak reverse voltage, (note 1) 1100 V MAXIMUM OTHER RATINGS UNITS LIMITS IT(AV) Mean on-state current, Tsink=55°C, (note 2) 809 A

 
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