R1158NC26P SCR DATASHEET
R1158NC26P ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1400 V
Maximum average on-state current (IT(AVR)): 1178 A
Non repetitive surge peak on-state current (ITSM): 17000 A
Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.02 K/W
Peak on-state voltage drop (VTM): 0.3 V
R1158NC26P Datasheet
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Description
Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1158NC26x Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VDRM Repetitive peak off-state voltage, (note 1) 2600 V VDSM Non-repetitive peak off-state voltage, (note 1) 2600 V VRRM Repetitive peak reverse voltage, (note 1) 2600 V VRSM Non-repetitive peak reverse voltage, (note 1) 2700 V MAXIMUM OTHER RATINGS UNITS LIMITS IT(AVM) Maximum average on-state current, Tsink=55°C, (not
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |