R1211NC12E SCR DATASHEET

R1211NC12E ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 1271 A
   Non repetitive surge peak on-state current (I_TSM): 18000 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.02 K/W
   Peak on-state voltage drop (V_TM): 0.24 V

 

R1211NC12E Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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R1211NC12E Datasheet

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Description

 Distributed gate thyristor type R1211NC12x Date:- 01 August 2012 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R1211NC12x Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VDRM Repetitive peak off-state voltage, (note 1) 1200 V VDSM Non-repetitive peak off-state voltage, (note 1) 1200 V VRRM Repetitive peak reverse voltage, (note 1) 1200 V VRSM Non-repetitive peak reverse voltage, (note 1) 1300 V MAXIMUM OTHER RATINGS UNITS LIMITS IT(AV) Mean o