R1U50-600A SCR DATASHEET

R1U50-600A ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 2800 V
   Maximum average on-state current (I_T(AVR)): 2475 A
   Non repetitive surge peak on-state current (I_TSM): 31000 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.01 K/W
   Peak on-state voltage drop (V_TM): 0.17 V

R1U50-600A Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

R1U50-600A Datasheet

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Description

LITE-ON R1U50-600A SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 1 AMPERES RMS Reverse Blocking Thyristors 600 VOLTS TO-92 (TO-226AA) FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other TO-92 Logic Circuits DIM. MIN. MAX. Blocking Voltage to 600 Volts A 4.45 4.70 On– State Current Rating of 0.8 Amperes RMS at 80℃ B 4.32 5.33 High Surge Current Capability — 10 Amperes Minimum and Maximum Values of IGT, VGT and IH Specified C

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All Transistors. SCR. R1U50-600A Datasheet