R3636EC16N SCR DATASHEET

R3636EC16N ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 2000 V
   Maximum average on-state current (I_T(AVR)): 3636 A
   Non repetitive surge peak on-state current (I_TSM): 38900 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.01 K/W
   Peak on-state voltage drop (V_TM): 0.16 V

 

R3636EC16N Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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R3636EC16N Datasheet

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Description

Date:- 30 Mar, 2007 Data Sheet Issue:- 1 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20# Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS (Note 1) UNITS LIMITS V Repetitive peak off-state voltage 1600-2000 V DRM V Non-repetitive peak off-state voltage 1600-2000 V DSM VRRM Repetitive peak reverse voltage 1600-2000 V V Non-repetitive peak reverse voltage 1700-2100 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS I Maximum average on-state current,